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IXFN73N30
MOSFET, N, SOT-227B
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Modèle arrêté
Informations produit
FabricantIXYS SEMICONDUCTOR
Réf. FabricantIXFN73N30Copie
Code Commande97K2551
Fiche technique
Channel TypeN Channel
Continuous Drain Current Id73A
Drain Source Voltage Vds300V
Drain Source On State Resistance0.045ohm
On Resistance Rds(on)0.045ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation520W
Power Dissipation Pd520W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
Aperçu du produit
The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- JEDEC TO-264 AA, epoxy meets UL94V-0 flammability
- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
Applications
Power Management, Industrial, Lighting
Spécifications techniques
Channel Type
N Channel
Drain Source Voltage Vds
300V
On Resistance Rds(on)
0.045ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation Pd
520W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Continuous Drain Current Id
73A
Drain Source On State Resistance
0.045ohm
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
4V
Power Dissipation
520W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Documents techniques (2)
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (17-Jan-2023)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit