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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN73N30
Newark Part No.97K2551
Technical Datasheet
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN73N30
Newark Part No.97K2551
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id73A
Drain Source Voltage Vds300V
On Resistance Rds(on)0.045ohm
Drain Source On State Resistance0.045ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor MountingModule
Power Dissipation Pd520W
Power Dissipation520W
Operating Temperature Max150°C
No. of Pins3Pins
Qualification-
Product Range-
MSL-
SVHCNo SVHC (25-Jun-2020)
Product Overview
The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- JEDEC TO-264 AA, epoxy meets UL94V-0 flammability
- miniBLOC with aluminium nitride isolation
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance
- High power density
- Easy to mount
- Space-saving s
Applications
Power Management, Industrial, Lighting
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.045ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Power Dissipation
520W
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Continuous Drain Current Id
73A
On Resistance Rds(on)
0.045ohm
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
520W
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate