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CM100DU-24NFH
IGBT Module, Dual [Half Bridge], 100 A, 6.5 V, 560 W, 150 °C, Module
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FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM100DU-24NFH
Code Commande18K8708
Gamme de produitNFH Series
Votre numéro de pièce
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 30 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM100DU-24NFH
Code Commande18K8708
Gamme de produitNFH Series
Fiche technique
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
Continuous Collector Current100A
DC Collector Current100A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage6.5V
Power Dissipation560W
Power Dissipation Pd560W
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product RangeNFH Series
SVHCTo Be Advised
Aperçu du produit
The CM100DU-24NFH is a dual IGBT Module designed for use in high frequency applications, 30kHz for hard switching applications and 60 to 70kHz for soft switching applications. The NFH series module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low ESW(off)
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Power Management, HVAC, Maintenance & Repair
Spécifications techniques
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
560W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
DC Collector Current
100A
Collector Emitter Saturation Voltage
6.5V
Power Dissipation Pd
560W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
-
Product Range
NFH Series
Documents techniques (2)
Produits associés
2 produit(s) trouvé(s)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit