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CM100TU-24H
IGBT Module, Six Pack [Full Bridge], 100 A, 1.2 kV, 650 W, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 28 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM100TU-24H
Code Commande09B2203
Fiche technique
Transistor PolarityN Channel
IGBT ConfigurationSix Pack [Full Bridge]
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage1.2kV
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation650W
Power Dissipation Pd650W
Collector Emitter Voltage V(br)ceo1.2kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins17Pins
Collector Emitter Voltage Max1.2kV
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
N Channel
DC Collector Current
100A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation
650W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Max
150°C
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Six Pack [Full Bridge]
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
650W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
No. of Pins
17Pins
IGBT Technology
-
Product Range
-
Documents techniques (1)
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Non
Conforme à la norme RoHS Phthalates:Non
SVHC :To Be Advised
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