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CM150TL-24NF
IGBT Module, Six Pack [Full Bridge], 150 A, 1.2 kV, 890 W, 150 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 29 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM150TL-24NF
Code Commande23J8001
Fiche technique
Transistor PolarityN Channel
IGBT ConfigurationSix Pack [Full Bridge]
DC Collector Current150A
Continuous Collector Current150A
Collector Emitter Saturation Voltage1.2kV
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd890W
Power Dissipation890W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins20Pins
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
N Channel
DC Collector Current
150A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
890W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Six Pack [Full Bridge]
Continuous Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
890W
Operating Temperature Max
150°C
Transistor Case Style
Module
No. of Pins
20Pins
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
-
Documents techniques (2)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit