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CM900DUC-24NF
IGBT Module, Dual [Half Bridge], 900 A, 1.2 kV, 5.9 kW, 130 °C, Module
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 22 semaine(s)
Informations produit
FabricantMITSUBISHI ELECTRIC
Réf. FabricantCM900DUC-24NF
Code Commande58T5723
Fiche technique
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current900A
Continuous Collector Current900A
Collector Emitter Saturation Voltage1.2kV
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation5.9kW
Power Dissipation Pd5.9kW
Junction Temperature, Tj Max130°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max130°C
Transistor Case StyleModule
No. of Pins21Pins
IGBT TerminationTab
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Spécifications techniques
Transistor Polarity
Dual N Channel
DC Collector Current
900A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation
5.9kW
Junction Temperature, Tj Max
130°C
Operating Temperature Max
130°C
No. of Pins
21Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
900A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
5.9kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
1.2kV
Product Range
-
Documents techniques (1)
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit