Print Page
CM900DUC-24NF
IGBT Module, Dual [Half Bridge], 900 A, 1.2 kV, 5.9 kW, 130 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM900DUC-24NF
Newark Part No.58T5723
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM900DUC-24NF
Newark Part No.58T5723
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
Continuous Collector Current900A
DC Collector Current900A
Collector Emitter Saturation Voltage1.2kV
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd5.9kW
Power Dissipation5.9kW
Junction Temperature, Tj Max130°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max130°C
Transistor Case StyleModule
IGBT TerminationTab
No. of Pins21Pins
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
900A
Collector Emitter Saturation Voltage
1.2kV
Power Dissipation Pd
5.9kW
Junction Temperature, Tj Max
130°C
Operating Temperature Max
130°C
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
DC Collector Current
900A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
5.9kW
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
Module
No. of Pins
21Pins
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate