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BFQ18A,115
Bipolar - RF Transistor, Wideband, NPN, 18 V, 4 GHz, 1 W, 150 mA, SOT-89
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Modèle arrêté
Informations produit
FabricantNXP
Réf. FabricantBFQ18A,115Copie
Code Commande70R2542
Fiche technique
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo18V
Collector Emitter Voltage Max18V
Transition Frequency4GHz
Power Dissipation1W
Power Dissipation Pd1W
DC Collector Current150mA
Continuous Collector Current150mA
DC Current Gain hFE25hFE
Transistor Case StyleSOT-89
No. of Pins3Pins
RF Transistor CaseSOT-89
DC Current Gain hFE Min25hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (15-Jan-2019)
Spécifications techniques
Transistor Polarity
NPN
Collector Emitter Voltage Max
18V
Power Dissipation
1W
DC Collector Current
150mA
DC Current Gain hFE
25hFE
No. of Pins
3Pins
DC Current Gain hFE Min
25hFE
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (15-Jan-2019)
Collector Emitter Voltage V(br)ceo
18V
Transition Frequency
4GHz
Power Dissipation Pd
1W
Continuous Collector Current
150mA
Transistor Case Style
SOT-89
RF Transistor Case
SOT-89
Transistor Mounting
Surface Mount
Qualification
-
MSL
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (15-Jan-2019)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit