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MRFE6VP6300HR5
RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780
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Informations produit
FabricantNXP
Réf. FabricantMRFE6VP6300HR5
Code Commande29X4273
Fiche technique
Drain Source Voltage Vds130VDC
Continuous Drain Current Id-
Power Dissipation1.05kW
Operating Frequency Min1.8MHz
Power Dissipation Pd300W
Operating Frequency Max600MHz
Transistor Case StyleNI-780
No. of Pins4Pins
RF Transistor CaseNI-780
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Aperçu du produit
MRFE6VP6300HR5 is a RF power field effect transistor. A high ruggedness N-channel enhancement mode lateral MOSFETs. This device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. This has unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
- Device can be used single ended or in a push pull configuration
- Qualified up to a maximum of 50VDD operation
- Characterized from 30V to 50V for extended power range
- Suitable for linear application with appropriate biasing
- Integrated ESD protection
- Greater negative gate-source voltage range for improved class C operation
- Characterized with series equivalent large-signal impedance parameters
Spécifications techniques
Drain Source Voltage Vds
130VDC
Power Dissipation
1.05kW
Power Dissipation Pd
300W
Transistor Case Style
NI-780
RF Transistor Case
NI-780
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
-
Documents techniques (4)
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (27-Jun-2024)
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