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MRFE6VP6300HR5
RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | NXP |
|---|---|
| Manufacturer Part No | MRFE6VP6300HR5Copy |
| Manufacturer Standard Lead Time | 62 weeks |
| Newark Part No. | 29X4273 |
| Your Part Number | |
| Technical Datasheet |
Available to Order
Manufacturer Standard Lead Time: 62 week(s)
| Quantity | Price |
|---|---|
| 50+ | $275.830 |
| 150+ | $267.150 |
| 250+ | $262.700 |
| 500+ | $257.450 |
Price for:Each (Supplied on Full Reel)
Minimum: 50
Multiple: 50
$13,791.50
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | NXP |
|---|---|
| Manufacturer Part No | MRFE6VP6300HR5Copy |
| Manufacturer Standard Lead Time | 62 weeks |
| Newark Part No. | 29X4273 |
| Technical Datasheet | |
| Drain Source Voltage Vds | 130VDC |
| Continuous Drain Current Id | - |
| Power Dissipation | 1.05kW |
| Power Dissipation Pd | 300W |
| Operating Frequency Min | 1.8MHz |
| Operating Frequency Max | 600MHz |
| Transistor Case Style | NI-780 |
| No. of Pins | 4Pins |
| RF Transistor Case | NI-780 |
| Operating Temperature Max | 225°C |
| Channel Type | N Channel |
| Transistor Mounting | Flange |
| Product Range | - |
| MSL | - |
| SVHC | No SVHC (27-Jun-2024) |
Product Overview
MRFE6VP6300HR5 is a RF power field effect transistor. A high ruggedness N-channel enhancement mode lateral MOSFETs. This device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. This has unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
- Device can be used single ended or in a push pull configuration
- Qualified up to a maximum of 50VDD operation
- Characterized from 30V to 50V for extended power range
- Suitable for linear application with appropriate biasing
- Integrated ESD protection
- Greater negative gate-source voltage range for improved class C operation
- Characterized with series equivalent large-signal impedance parameters
Technical Specifications
| Drain Source Voltage Vds | 130VDC |
|---|---|
| Power Dissipation | 1.05kW |
| Operating Frequency Min | 1.8MHz |
| Transistor Case Style | NI-780 |
| RF Transistor Case | NI-780 |
| Channel Type | N Channel |
| Product Range | - |
| SVHC | No SVHC (27-Jun-2024) |
| Continuous Drain Current Id | - |
|---|---|
| Power Dissipation Pd | 300W |
| Operating Frequency Max | 600MHz |
| No. of Pins | 4Pins |
| Operating Temperature Max | 225°C |
| Transistor Mounting | Flange |
| MSL | - |
Alternatives for MRFE6VP6300HR5
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (27-Jun-2024) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Product traceability |