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MRFE6VP6300HR5
RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780
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Product Information
ManufacturerNXP
Manufacturer Part NoMRFE6VP6300HR5
Newark Part No.29X4273
Technical Datasheet
Drain Source Voltage Vds130VDC
Continuous Drain Current Id-
Power Dissipation1.05kW
Operating Frequency Min1.8MHz
Power Dissipation Pd300W
Operating Frequency Max600MHz
Transistor Case StyleNI-780
No. of Pins4Pins
RF Transistor CaseNI-780
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
MRFE6VP6300HR5 is a RF power field effect transistor. A high ruggedness N-channel enhancement mode lateral MOSFETs. This device is designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. This has unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600MHz.
- Device can be used single ended or in a push pull configuration
- Qualified up to a maximum of 50VDD operation
- Characterized from 30V to 50V for extended power range
- Suitable for linear application with appropriate biasing
- Integrated ESD protection
- Greater negative gate-source voltage range for improved class C operation
- Characterized with series equivalent large-signal impedance parameters
Technical Specifications
Drain Source Voltage Vds
130VDC
Power Dissipation
1.05kW
Power Dissipation Pd
300W
Transistor Case Style
NI-780
RF Transistor Case
NI-780
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Operating Frequency Max
600MHz
No. of Pins
4Pins
Operating Temperature Max
225°C
Transistor Mounting
Flange
MSL
-
Alternatives for MRFE6VP6300HR5
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate