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MRFE6VS25NR1
RF FET Transistor, 133 VDC, 25 W, 1.8 MHz, 2 GHz, TO-270
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Informations produit
FabricantNXP
Réf. FabricantMRFE6VS25NR1
Code Commande05W8101
Fiche technique
Drain Source Voltage Vds133VDC
Continuous Drain Current Id-
Power Dissipation25W
Operating Frequency Min1.8MHz
Power Dissipation Pd25W
Operating Frequency Max2GHz
Transistor Case StyleTO-270
No. of Pins2Pins
RF Transistor CaseTO-270
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
MSLMSL 3 - 168 hours
SVHCNo SVHC (27-Jun-2024)
Aperçu du produit
The MRFE6VS25NR1 is a N-channel RF Power LDMOS Transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000MHz. It is fabricated using enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
- High ruggedness
- Enhancement-mode lateral MOSFET
- Wide operating frequency range
- Extreme ruggedness
- Unmatched, capable of very broadband operation
- Integrated stability enhancements
- Low thermal resistance
- Extended ESD protection circuit
Spécifications techniques
Drain Source Voltage Vds
133VDC
Power Dissipation
25W
Power Dissipation Pd
25W
Transistor Case Style
TO-270
RF Transistor Case
TO-270
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Operating Frequency Max
2GHz
No. of Pins
2Pins
Operating Temperature Max
150°C
Transistor Mounting
Flange
MSL
MSL 3 - 168 hours
Documents techniques (4)
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Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (27-Jun-2024)
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Certificat de conformité du produit