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2N3820
RF FET Transistor, -10 V, 7.65 mA, 350 mW, TO-92
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Modèle arrêté
Informations produit
FabricantONSEMI
Réf. Fabricant2N3820Copie
Code Commande58K9637
Fiche technique
Drain Source Voltage Vds-10V
Continuous Drain Current Id7.65mA
Power Dissipation350mW
Power Dissipation Pd350mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-92
No. of Pins3Pins
RF Transistor CaseTO-92
Channel TypeP Channel
Operating Temperature Max-
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCTo Be Advised
Spécifications techniques
Drain Source Voltage Vds
-10V
Power Dissipation
350mW
Operating Frequency Min
-
Transistor Case Style
TO-92
RF Transistor Case
TO-92
Operating Temperature Max
-
Product Range
-
SVHC
To Be Advised
Continuous Drain Current Id
7.65mA
Power Dissipation Pd
350mW
Operating Frequency Max
-
No. of Pins
3Pins
Channel Type
P Channel
Transistor Mounting
Through Hole
MSL
-
Documents techniques (1)
Législation et Questions environnementales
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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Certificat de conformité du produit