2N7000-D26Z
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | 2N7000-D26ZCopie |
| Délai d’approvisionnement standard du fabricant | 14 semaines |
| Code Commande | Mise en bobine78K6147RL Bandes découpées78K6147 |
| Votre numéro de pièce | |
| Fiche technique |
Vous en voulez davantage ?
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 0,876 $ | 0,88 $ |
| Total Prix | 0,88 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 0,876 $ |
| 50+ | 0,392 $ |
| 100+ | 0,345 $ |
| 250+ | 0,303 $ |
| 500+ | 0,260 $ |
| 1000+ | 0,254 $ |
| 2500+ | 0,250 $ |
| 5000+ | 0,245 $ |
Informations produit
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | 2N7000-D26ZCopie |
| Délai d’approvisionnement standard du fabricant | 14 semaines |
| Code Commande | Mise en bobine78K6147RL Bandes découpées78K6147 |
| Fiche technique | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 200mA |
| Drain Source On State Resistance | 5ohm |
| On Resistance Rds(on) | 5ohm |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 400mW |
| Transistor Case Style | TO-92 |
| Gate Source Threshold Voltage Max | 2.1V |
| Power Dissipation | 400mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Aperçu du produit
The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. This product is general usage and suitable for many different applications.
- High density cell design for extremely low RDS (ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
- 60V drain gate voltage (VDGR)
- ±20V continuous gate source voltage (VGSS)
- 312.5°C/W Thermal resistance, junction to ambient
Spécifications techniques
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 60V |
| Drain Source On State Resistance | 5ohm |
| Transistor Mounting | Through Hole |
| Power Dissipation Pd | 400mW |
| Gate Source Threshold Voltage Max | 2.1V |
| No. of Pins | 3Pins |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 200mA |
| On Resistance Rds(on) | 5ohm |
| Rds(on) Test Voltage | 10V |
| Transistor Case Style | TO-92 |
| Power Dissipation | 400mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
Documents techniques (2)
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Législation et Questions environnementales
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| Conforme RoHS : | Oui RoHS |
| Conforme à la norme RoHS Phthalates: | Oui RoHS |
| SVHC : | No SVHC (25-Jun-2025) |
| Télécharger le certificat de conformité du produit | Certificat de conformité du produit |