Imprimer la page
FDC6310P
Dual MOSFET, P Channel, 20 V, 20 V, 2.2 A, 2.2 A
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
FabricantONSEMI
Réf. FabricantFDC6310PCopie
Délai d’approvisionnement standard du fabricant22 semaines
Code Commande58K1418
Votre numéro de pièce
18 000 En Stock
| Quantité | Prix |
|---|---|
| 3000+ | 0,335 $ |
| 6000+ | 0,324 $ |
Prix pour :Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
1 005,00 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantONSEMI
Réf. FabricantFDC6310PCopie
Délai d’approvisionnement standard du fabricant22 semaines
Code Commande58K1418
Fiche technique
Channel TypeP Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id2.2A
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel2.2A
Continuous Drain Current Id P Channel2.2A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.125ohm
Transistor Case StyleSOT-23
No. of Pins6Pins
Power Dissipation N Channel960mW
Power Dissipation P Channel960mW
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
The FDC6310P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applications
Industrial, Power Management
Spécifications techniques
Channel Type
P Channel
Continuous Drain Current Id
2.2A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
2.2A
Drain Source On State Resistance P Channel
0.125ohm
No. of Pins
6Pins
Power Dissipation P Channel
960mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
2.2A
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOT-23
Power Dissipation N Channel
960mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Documents techniques (2)
Produits de remplacement pour FDC6310P
1 produit trouvé
Produits associés
1 produit trouvé
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit