FDN5630
Power MOSFET, N Channel, 60 V, 1.7 A, 0.1 ohm, SuperSOT, Surface Mount
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | FDN5630Copie |
| Délai d’approvisionnement standard du fabricant | 34 semaines |
| Code Commande | Bobine complète67R2066 Mise en bobine58K8845RL Bandes découpées58K8845 |
| Votre numéro de pièce | |
| Fiche technique |
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| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 0,803 $ | 0,80 $ |
| Total Prix | 0,80 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 0,803 $ |
| 50+ | 0,363 $ |
| 100+ | 0,320 $ |
| 250+ | 0,281 $ |
| 500+ | 0,240 $ |
| 1000+ | 0,236 $ |
| 2500+ | 0,231 $ |
| 5000+ | 0,227 $ |
| Quantité | Prix |
|---|---|
| 3000+ | 0,199 $ |
| 6000+ | 0,181 $ |
| 9000+ | 0,176 $ |
| 15000+ | 0,174 $ |
| 30000+ | 0,169 $ |
| 75000+ | 0,167 $ |
Informations produit
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | FDN5630Copie |
| Délai d’approvisionnement standard du fabricant | 34 semaines |
| Code Commande | Bobine complète67R2066 Mise en bobine58K8845RL Bandes découpées58K8845 |
| Fiche technique | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 1.7A |
| On Resistance Rds(on) | 0.073ohm |
| Drain Source On State Resistance | 0.1ohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 500mW |
| Gate Source Threshold Voltage Max | 2.4V |
| Transistor Case Style | SuperSOT |
| Power Dissipation | 500mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Aperçu du produit
The FDN5630 is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- Low gate charge
- Optimized for use in high frequency DC/DC converters
Spécifications techniques
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 60V |
| On Resistance Rds(on) | 0.073ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 500mW |
| Transistor Case Style | SuperSOT |
| No. of Pins | 3Pins |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 1.7A |
| Drain Source On State Resistance | 0.1ohm |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2.4V |
| Power Dissipation | 500mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
Documents techniques (3)
Produits de remplacement pour FDN5630
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Législation et Questions environnementales
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| Conforme RoHS : | Oui RoHS |
| Conforme à la norme RoHS Phthalates: | Oui RoHS |
| SVHC : | No SVHC (25-Jun-2025) |
| Télécharger le certificat de conformité du produit | Certificat de conformité du produit |
| Traçabilité des produits |