FDV303N
Power MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm, SOT-23, Surface Mount
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | FDV303NCopie |
| Délai d’approvisionnement standard du fabricant | 14 semaines |
| Code Commande | Mise en bobine58K8857RL Bandes découpées58K8857 |
| Votre numéro de pièce | |
| Fiche technique |
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| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 0,463 $ | 0,46 $ |
| Total Prix | 0,46 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 0,463 $ |
| 50+ | 0,217 $ |
| 100+ | 0,190 $ |
| 250+ | 0,168 $ |
| 500+ | 0,146 $ |
| 1000+ | 0,143 $ |
| 2500+ | 0,140 $ |
| 5000+ | 0,138 $ |
Informations produit
| Fabricant | ONSEMI |
|---|---|
| Réf. Fabricant | FDV303NCopie |
| Délai d’approvisionnement standard du fabricant | 14 semaines |
| Code Commande | Mise en bobine58K8857RL Bandes découpées58K8857 |
| Fiche technique | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Drain Source Voltage Vds | 25V |
| Continuous Drain Current Id | 680mA |
| On Resistance Rds(on) | 0.33ohm |
| Drain Source On State Resistance | 0.45ohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 4.5V |
| Power Dissipation Pd | 350mW |
| Transistor Case Style | SOT-23 |
| Gate Source Threshold Voltage Max | 800mV |
| Power Dissipation | 350mW |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Qualification | - |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Aperçu du produit
The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V and designed for application in battery circuits using either one lithium or three cadmium or NHM cells, inverters, high efficiency miniature discrete DC/DC conversion in electronic devices like cellular phones and pagers.
- Drain to source voltage (Vds) of 25V
- Gate to source voltage of 8V
- Continuous drain current (Id) of 680mA
- Power dissipation (Pd) of 350mW
- Low on state resistance of 330mohm at Vgs 4.5V
- Operating temperature range from -55°C to 150°C
Spécifications techniques
| Channel Type | N Channel |
|---|---|
| Drain Source Voltage Vds | 25V |
| On Resistance Rds(on) | 0.33ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 350mW |
| Gate Source Threshold Voltage Max | 800mV |
| No. of Pins | 3Pins |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| Transistor Polarity | N Channel |
|---|---|
| Continuous Drain Current Id | 680mA |
| Drain Source On State Resistance | 0.45ohm |
| Rds(on) Test Voltage | 4.5V |
| Transistor Case Style | SOT-23 |
| Power Dissipation | 350mW |
| Operating Temperature Max | 150°C |
| Product Range | - |
| SVHC | No SVHC (25-Jun-2025) |
Documents techniques (3)
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Législation et Questions environnementales
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| Conforme RoHS : | Oui RoHS |
| Conforme à la norme RoHS Phthalates: | Oui RoHS |
| SVHC : | No SVHC (25-Jun-2025) |
| Télécharger le certificat de conformité du produit | Certificat de conformité du produit |