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FQA27N25
Power MOSFET, N Channel, 250 V, 27 A, 0.083 ohm, TO-3PN, Through Hole
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 101 semaine(s)
Informations produit
FabricantONSEMI
Réf. FabricantFQA27N25
Code Commande20C4398
Gamme de produitQFET Series
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id27A
Drain Source On State Resistance0.083ohm
On Resistance Rds(on)0.083ohm
Transistor MountingThrough Hole
Power Dissipation Pd210W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Transistor Case StyleTO-3PN
Power Dissipation210W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeQFET Series
SVHCLead
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.083ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-3PN
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
27A
On Resistance Rds(on)
0.083ohm
Power Dissipation Pd
210W
Gate Source Threshold Voltage Max
5V
Power Dissipation
210W
Operating Temperature Max
150°C
Product Range
QFET Series
SVHC
Lead
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
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