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FQA36P15
Power MOSFET, P Channel, 150 V, 36 A, 0.09 ohm, TO-3P, Through Hole
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Modèle arrêté
Informations produit
FabricantONSEMI
Réf. FabricantFQA36P15Copie
Code Commande45J3232
Fiche technique
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id36A
On Resistance Rds(on)0.09ohm
Drain Source On State Resistance0.09ohm
Transistor MountingThrough Hole
Power Dissipation Pd294W
Rds(on) Test Voltage10V
Transistor Case StyleTO-3P
Gate Source Threshold Voltage Max4V
Power Dissipation294W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
MSL-
SVHCLead (17-Jan-2023)
Aperçu du produit
The FQA36P15 is a -150V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- 175°C rated junction temperature
Spécifications techniques
Channel Type
P Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.09ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
36A
Drain Source On State Resistance
0.09ohm
Power Dissipation Pd
294W
Transistor Case Style
TO-3P
Power Dissipation
294W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead (17-Jan-2023)
Documents techniques (4)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead (17-Jan-2023)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit