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FQU9N25TU
Power MOSFET, N Channel, 250 V, 7.4 A, 0.33 ohm, TO-251 (IPAK), Through Hole
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FabricantONSEMI
Réf. FabricantFQU9N25TU
Code Commande58K1533
Gamme de produitQFET Series
Fiche technique
Disponible sur commande
Délais d’approvisionnement standard du fabricant : 101 semaine(s)
Informations produit
FabricantONSEMI
Réf. FabricantFQU9N25TU
Code Commande58K1533
Gamme de produitQFET Series
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id7.4A
Drain Source On State Resistance0.33ohm
On Resistance Rds(on)0.33ohm
Transistor Case StyleTO-251 (IPAK)
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation55W
Power Dissipation Pd55W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeQFET Series
SVHCLead
Spécifications techniques
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.33ohm
Transistor Case Style
TO-251 (IPAK)
Rds(on) Test Voltage
10V
Power Dissipation
55W
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
7.4A
On Resistance Rds(on)
0.33ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
55W
Operating Temperature Max
150°C
Product Range
QFET Series
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
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Certificat de conformité du produit