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FQU9N25TU
Power MOSFET, N Channel, 250 V, 7.4 A, 0.33 ohm, TO-251 (IPAK), Through Hole
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ManufacturerONSEMI
Manufacturer Part NoFQU9N25TU
Newark Part No.58K1533
Product RangeQFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 101 week(s)
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQU9N25TU
Newark Part No.58K1533
Product RangeQFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id7.4A
Drain Source On State Resistance0.33ohm
On Resistance Rds(on)0.33ohm
Transistor Case StyleTO-251 (IPAK)
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation55W
Power Dissipation Pd55W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product RangeQFET Series
SVHCLead
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.33ohm
Transistor Case Style
TO-251 (IPAK)
Rds(on) Test Voltage
10V
Power Dissipation
55W
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
7.4A
On Resistance Rds(on)
0.33ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
55W
Operating Temperature Max
150°C
Product Range
QFET Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate