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| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 0,645 $ | 0,64 $ |
| Total Prix | 0,64 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 0,645 $ |
| 10+ | 0,449 $ |
| 25+ | 0,395 $ |
| 50+ | 0,373 $ |
| 100+ | 0,349 $ |
| Quantité | Prix |
|---|---|
| 2500+ | 0,324 $ |
| 3000+ | 0,316 $ |
| 6000+ | 0,292 $ |
| 12000+ | 0,273 $ |
| 18000+ | 0,255 $ |
| 30000+ | 0,244 $ |
Informations produit
Aperçu du produit
The MC33172DR2G is a low power monolithic dual Operational Amplifier operates at 180μA per amplifier and offer 1.8MHz of gain bandwidth product and 2.1V/μs slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common-mode input voltage includes ground potential (VEE). With a Darlington input stage, this device exhibit high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no dead-band crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
- Output short-circuit protection
- Wide input common mode range, including ground (VEE)
- 2mV Low input offset voltage
- 0 to 500pF Large capacitance drive capability
- 0.03% Low total harmonic distortion
- 60° Excellent phase margin
- 15dB Excellent gain margin
Applications
Industrial, Automotive
Spécifications techniques
2Channels
2.1V/µs
SOIC
Low Power
2mV
Surface Mount
85°C
-
No SVHC (25-Jun-2025)
-
2 Amplifier
1.8MHz
± 1.5V to ± 22V
8Pins
-
20nA
-40°C
-
-
SOIC
1.8MHz
2.1V/µs
Documents techniques (3)
Produits de remplacement pour MC33172DR2G
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Produits associés
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit
