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MJE5851G
Bipolar (BJT) Single Transistor, General Purpose, PNP, 350 V, 8 A, 80 W, TO-220, Through Hole
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 103 semaine(s)
Informations produit
FabricantONSEMI
Réf. FabricantMJE5851G
Code Commande42K1299
Fiche technique
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo350V
Collector Emitter Voltage Max350V
Continuous Collector Current8A
Transition Frequency-
DC Collector Current8A
Power Dissipation Pd80W
Power Dissipation80W
Transistor MountingThrough Hole
DC Current Gain hFE15hFE
Transistor Case StyleTO-220
No. of Pins3Pins
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Spécifications techniques
Transistor Polarity
PNP
Collector Emitter Voltage Max
350V
Transition Frequency
-
Power Dissipation Pd
80W
Transistor Mounting
Through Hole
Transistor Case Style
TO-220
DC Current Gain hFE Min
15hFE
Qualification
-
MSL
-
Collector Emitter Voltage V(br)ceo
350V
Continuous Collector Current
8A
DC Collector Current
8A
Power Dissipation
80W
DC Current Gain hFE
15hFE
No. of Pins
3Pins
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Documents techniques (2)
Produits associés
2 produit(s) trouvé(s)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Y-Ex
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :Lead
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Certificat de conformité du produit