NDS355AN
Power MOSFET, N Channel, 30 V, 1.7 A, 85 mohm, SuperSOT, Surface Mount
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| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 1,210 $ | 1,21 $ |
| Total Prix | 1,21 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 1,210 $ |
| 50+ | 0,746 $ |
| 100+ | 0,483 $ |
| 250+ | 0,427 $ |
| 500+ | 0,370 $ |
| 1000+ | 0,333 $ |
| 2500+ | 0,326 $ |
| 5000+ | 0,319 $ |
Informations produit
Aperçu du produit
The NDS355AN is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards, other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
- High density cell design for extremely low RDS (ON)
- Exceptional ON-resistance and maximum DC current capability
Spécifications techniques
N Channel
30V
85mohm
Surface Mount
10V
SuperSOT
3Pins
-
MSL 1 - Unlimited
N Channel
1.7A
0.065ohm
500mW
1.6V
500mW
150°C
-
No SVHC (25-Jun-2025)
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit