NDSH25170A
Silicon Carbide Schottky Diode, EliteSiC Series, Single, 1.7 kV, 25 A, 169 nC, TO-247
Vous en voulez davantage ?
| Quantité | Prix |
|---|---|
| 1+ | 23,010 $ |
| 10+ | 21,350 $ |
| 25+ | 18,140 $ |
| 50+ | 14,930 $ |
| 100+ | 14,100 $ |
| 250+ | 13,260 $ |
Informations produit
Aperçu du produit
NDSH25170A is an EliteSiC silicon carbide (SiC) schottky diode. Silicon carbide (SiC) Schottky diode uses a completely new technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance set silicon carbide as the next generation of power semiconductors. System benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include SMPS, solar inverter, UPS, power switching circuits.
- Maximum junction temperature is 175°C
- Avalanche rated 506mJ
- High surge current capacity, positive temperature coefficient
- Ease of paralleling, no reverse recovery/no forward recovery
- Forward voltage is 1.50V typical at IF = 25A, TJ = 25°C
- Reverse current is 0.08µA typical at VR = 1700V, TJ = 25°C
- Total capacitive charge is 169nC typical at V = 800V
- TO-247-2LD package
Spécifications techniques
EliteSiC Series
1.7kV
169nC
2 Pin
Through Hole
Lead
Single
25A
TO-247
175°C
-
Documents techniques (2)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit