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TP65H035G4YS
Gallium Nitride (GaN) Transistor, 650 V, 46.5 A, 0.041 ohm, 42.7 nC, TO-247, Through Hole
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FabricantRENESAS
Réf. FabricantTP65H035G4YSCopie
Délai d’approvisionnement standard du fabricant28 semaines
Code Commande26AM1877
Gamme de produitSuperGaN Series
Votre numéro de pièce
1 113 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 13,120 $ |
| 10+ | 11,820 $ |
| 25+ | 10,750 $ |
| 50+ | 10,010 $ |
| 100+ | 9,340 $ |
| 250+ | 7,840 $ |
| 500+ | 7,590 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
13,12 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantRENESAS
Réf. FabricantTP65H035G4YSCopie
Délai d’approvisionnement standard du fabricant28 semaines
Code Commande26AM1877
Gamme de produitSuperGaN Series
Fiche technique
Drain Source Voltage Vds650V
Continuous Drain Current Id46.5A
Drain Source On State Resistance0.041ohm
Typical Gate Charge42.7nC
Transistor Case StyleTO-247
Transistor MountingThrough Hole
No. of Pins4Pins
Product RangeSuperGaN Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Aperçu du produit
TP65H035G4YS is a 650V, 35mohm gallium nitride (GaN) FET. It is a normally-off device using Renesas’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. It is ideal for datacom, broad industrial, PV inverter and servo motor applications.
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design featuring a wide gate safety margin and transient over-voltage capability
- Enhanced inrush current capability and reduced crossover loss
- Enables AC-DC bridgeless totem-pole PFC designs
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
- GSD pin layout improves high speed design
- Available in 4 pin TO-247 package
Spécifications techniques
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.041ohm
Transistor Case Style
TO-247
No. of Pins
4Pins
Qualification
-
Continuous Drain Current Id
46.5A
Typical Gate Charge
42.7nC
Transistor Mounting
Through Hole
Product Range
SuperGaN Series
SVHC
No SVHC (25-Jun-2025)
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (25-Jun-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit