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Modèle arrêté
Informations produit
FabricantROHM
Réf. FabricantBSM400C12P3G202
Code Commande88AH6167
Fiche technique
MOSFET Module ConfigurationChopper
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id400A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Power Dissipation Pd1.57kW
Gate Source Threshold Voltage Max5.6V
Power Dissipation1.57kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Aperçu du produit
BSM400C12P3G202 is a SiC power module. This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Application includes motor drive, converter, photovoltaics, wind power generation.
- Low surge, low switching loss, high-speed switching possible
- Reduced temperature dependence
- 1200V drain source voltage (Tj= 25°C), 1200V repetitive reverse voltage (Tj = 25°C)
- G - S voltage range from -4 to 26V (surge<300nsec, D-S short)
- Drain current is 358A (DC(Tc=60°C) VGS=18V, Tj= 25°C)
- Source current is 358A (DC(Tc=60°C) VGS=18V, Tj= 25°C)
- Forward current (clamp diode) is 400A (DC(Tc = 60°C)
- Total power dissipation is 150W (Tc = 25°C)
- Isolation voltage is 2500Vrms (terminals to baseplate f = 60Hz AC 1, min)
- Junction temperature range from -40 to 150°C
Spécifications techniques
MOSFET Module Configuration
Chopper
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
No. of Pins
-
Power Dissipation Pd
1.57kW
Power Dissipation
1.57kW
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
400A
On Resistance Rds(on)
-
Transistor Case Style
Module
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit