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STPSC2006CW
Silicon Carbide Schottky Diode, SiC, 600V Series, Dual Common Cathode, 600 V, 20 A, 12 nC, TO-247
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Modèle arrêté
Informations produit
FabricantSTMICROELECTRONICS
Réf. FabricantSTPSC2006CWCopie
Code Commande47T9398
Fiche technique
Product Range-
Diode ConfigurationDual Common Cathode
Repetitive Peak Reverse Voltage600V
Average Forward Current20A
Total Capacitive Charge12nC
Diode Case StyleTO-247
No. of Pins3 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
SVHCNo SVHC (17-Dec-2015)
Aperçu du produit
The STPSC2006CW is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 600V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. ST SiC diode will boost the performance of PFC operations in hard switching conditions.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- Particularly suitable in PFC boost diode function
Applications
Industrial
Spécifications techniques
Product Range
-
Repetitive Peak Reverse Voltage
600V
Total Capacitive Charge
12nC
No. of Pins
3 Pin
Diode Mounting
Through Hole
SVHC
No SVHC (17-Dec-2015)
Diode Configuration
Dual Common Cathode
Average Forward Current
20A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
-
Documents techniques (3)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (17-Dec-2015)
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Certificat de conformité du produit