OP231
Infrared Emitter, Hermetic, 890 nm, 18 °, TO-46, 500 ns, 250 ns
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| Quantité | Prix |
|---|---|
| 1+ | 5,550 $ |
| 10+ | 5,150 $ |
| 25+ | 4,940 $ |
| 50+ | 4,860 $ |
| 100+ | 4,760 $ |
| 250+ | 4,720 $ |
Informations produit
Aperçu du produit
The OP231 is a gallium aluminium arsenide (GaAIAs) Infrared Emitting Diode, mounted in a hermetic metal housing. The gallium aluminium arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. The device is lensed to provide a narrow beam angle (18°) between half power points. The 890nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle - combined with the specified radiant intensity of the OP231 series facilitates easy design in beam interrupt applications in conjunction with the OP800 or OP598 series photosensors. It is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors. It is suitable for use in non-contact reflective object sensor, assembly line automation, machine automation, machine safety, end of travel sensor, door sensor.
- Focused and non-focused optical light pattern
- Enhanced temperature range
- Mechanically and spectrally matched to other OPTEK devices
Spécifications techniques
890nm
TO-46
500ns
100mA
-65°C
-
-
18°
-
250ns
2V
125°C
-
No SVHC (27-Jun-2024)
Documents techniques (3)
Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit