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2N6796
Power MOSFET, N Channel, 100 V, 8 A, 0.18 ohm, TO-39, Through Hole
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Modèle arrêté
Informations produit
FabricantTT ELECTRONICS / SEMELAB
Réf. Fabricant2N6796Copie
Code Commande98K6265
Fiche technique
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id8A
Drain Source On State Resistance0.18ohm
On Resistance Rds(on)0.18ohm
Transistor Case StyleTO-39
Transistor MountingThrough Hole
Power Dissipation Pd25W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (16-Jul-2019)
Aperçu du produit
The 2N6796 is a N-channel enhancement TMOS FET offers 100V drain source voltage and 8A continuous drain current.
- 0.18Ω RDS (ON)
- -55 to 150°C Operating junction temperature range
Applications
Power Management, Industrial
Spécifications techniques
Channel Type
N Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.18ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.18ohm
Transistor Case Style
TO-39
Power Dissipation Pd
25W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (16-Jul-2019)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit