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FabricantTT ELECTRONICS / SEMELAB
Réf. FabricantBUZ905DCopie
Code Commande96K7205
Votre numéro de pièce
Modèle arrêté
Informations produit
FabricantTT ELECTRONICS / SEMELAB
Réf. FabricantBUZ905DCopie
Code Commande96K7205
Fiche technique
Channel TypeP Channel
Drain Source Voltage Vds160V
Continuous Drain Current Id16A
Drain Source On State Resistance0.75ohm
On Resistance Rds(on)0.75ohm
Transistor Case StyleTO-3
Transistor MountingThrough Hole
Power Dissipation Pd250W
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max1.5V
Power Dissipation250W
No. of Pins2Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (16-Jul-2019)
Aperçu du produit
The BUZ905D is a P-channel enhancement-mode Power MOSFET offers -160V drain source voltage and -16A continuous drain current.
- High speed switching
- Semefab designed and diffused
- High voltage
- High energy rating
- Integral protection diode
- BUZ900D complimentary P-channel
- Double die package for maximum power and heat-sink space
Applications
Power Management, Audio, Industrial
Spécifications techniques
Channel Type
P Channel
Continuous Drain Current Id
16A
On Resistance Rds(on)
0.75ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
-
Power Dissipation
250W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (16-Jul-2019)
Drain Source Voltage Vds
160V
Drain Source On State Resistance
0.75ohm
Transistor Case Style
TO-3
Power Dissipation Pd
250W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
2Pins
Product Range
-
MSL
-
Documents techniques (2)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (16-Jul-2019)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit
