Imprimer la page
FB180SA10P
Bipolar (BJT) Single Transistor, N Channel, 180 A, 100 V, 0.0065 ohm, 10 V, 4 V
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Modèle arrêté
Informations produit
FabricantVISHAY
Réf. FabricantFB180SA10PCopie
Code Commande12M7522
Fiche technique
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id180A
Drain Source Voltage Vds100V
On Resistance Rds(on)0.0065ohm
Drain Source On State Resistance0.0065ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd480W
Power Dissipation480W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Aperçu du produit
The FB180SA10P is a 5th generation high current density Power MOSFET is parallel into a compact, high power module providing the best combination of switching, ruggedized design, very low on resistance and cost effectiveness.
- Fully isolated package
- Dynamic dv/dt rating
- Fully avalanche rated
- Simple drive requirements
- Low drain to case capacitance
- Low internal inductance
Applications
Industrial, Commercial
Spécifications techniques
Transistor Polarity
N Channel
Continuous Drain Current Id
180A
On Resistance Rds(on)
0.0065ohm
Rds(on) Test Voltage
10V
Power Dissipation Pd
480W
Operating Temperature Max
150°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0065ohm
Gate Source Threshold Voltage Max
4V
Power Dissipation
480W
Product Range
-
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit