| Quantité | Prix |
|---|---|
| 1000+ | 3,080 $ |
Informations produit
Aperçu du produit
The IRFIBE30GPBF is a 800V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware in applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- Low thermal resistance
- Sink to lead creepage
- High voltage isolation
- Dynamic dV/dt rating
Applications
Industrial, Power Management
Spécifications techniques
N Channel
800V
3ohm
Through Hole
35W
4V
3Pins
-
Lead
N Channel
2.1A
3ohm
10V
TO-220FP
35W
150°C
-
Documents techniques (2)
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit