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| Quantité | Prix |
|---|---|
| 1+ | 6,160 $ |
| 10+ | 5,990 $ |
| 25+ | 5,810 $ |
| 50+ | 3,560 $ |
| 100+ | 3,300 $ |
| 250+ | 3,080 $ |
| 500+ | 2,860 $ |
Informations produit
Aperçu du produit
The IRFIZ48GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
- Isolated package
- 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
- 4.8mm Sink to lead creepage distance
- -55 to 175°C Operating temperature range
- Dynamic dV/dt rating
- Low thermal resistance
Applications
Industrial, Power Management, Commercial
Spécifications techniques
N Channel
60V
0.018ohm
Through Hole
10V
4V
3Pins
-
Lead (04-Feb-2026)
N Channel
37A
0.018ohm
50W
TO-220
50W
175°C
-
Documents techniques (2)
Produits de remplacement pour IRFIZ48GPBF
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Produits associés
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit
