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SI1902CDL-T1-GE3
MOSFET, DUAL, N-CH, 20V, 1.1A, SOT-363-6
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Informations produit
FabricantVISHAY
Réf. FabricantSI1902CDL-T1-GE3
Code Commande04AJ4583
Fiche technique
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id1.1A
Continuous Drain Current Id N Channel1.1A
Continuous Drain Current Id P Channel1.1A
Drain Source On State Resistance N Channel0.195ohm
Drain Source On State Resistance P Channel0.195ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel420mW
Power Dissipation P Channel420mW
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Spécifications techniques
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
1.1A
Continuous Drain Current Id P Channel
1.1A
Drain Source On State Resistance P Channel
0.195ohm
No. of Pins
6Pins
Power Dissipation P Channel
420mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
1.1A
Drain Source On State Resistance N Channel
0.195ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
420mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Documents techniques (2)
Produits de remplacement pour SI1902CDL-T1-GE3
1 produit trouvé
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (21-Jan-2025)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit
Traçabilité des produits