SQ2364EES-T1_GE3
Power MOSFET, N Channel, 60 V, 2 A, 0.24 ohm, SOT-23, Surface Mount
| Type de conditionnement | Quantité | PU HT: | Total |
|---|---|---|---|
| Bandes découpées | 1 | 1,520 $ | 1,52 $ |
| Total Prix | 1,52 $ | ||
| Quantité | Prix |
|---|---|
| 1+ | 1,520 $ |
| 50+ | 0,949 $ |
| 100+ | 0,621 $ |
| 250+ | 0,559 $ |
| 500+ | 0,498 $ |
| 1000+ | 0,466 $ |
| 2500+ | 0,433 $ |
| 5000+ | 0,412 $ |
| Quantité | Prix |
|---|---|
| 3000+ | 0,480 $ |
| 5000+ | 0,604 $ |
| 9000+ | 0,441 $ |
| 10000+ | 0,568 $ |
| 15000+ | 0,433 $ |
| 20000+ | 0,538 $ |
| 30000+ | 0,511 $ |
| 50000+ | 0,494 $ |
Informations produit
Aperçu du produit
New AEC-Q101 automotive MOSFETs ffrom Vishay are manufactured on a dedicated process flow to instill ruggedness. Rated for a maximum junction temperature of 175 °C, the Vishay Siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel TrenchFET® technologies in lead (Pb)- and halogen-free SO packages. Options include the traditional D2PAK (TO-263) and DPAK (TO-252), as well as several PowerPAK® packages, which save space over the D2PAK, DPAK, and SO-8 while delivering similar on-resistance and thermal resistance. The SQ series also includes devices in ultra compact packages such as the TSOP-6, SOT-23, and SC-89.
Spécifications techniques
N Channel
60V
0.19ohm
SOT-23
3W
600mV
3Pins
TrenchFET
AEC-Q101
No SVHC (04-Feb-2026)
N Channel
2A
0.24ohm
Surface Mount
4.5V
3W
175°C
AEC-Q101
MSL 1 - Unlimited
Documents techniques (1)
Produits de remplacement pour SQ2364EES-T1_GE3
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Législation et Questions environnementales
RoHS
RoHS
Certificat de conformité du produit