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SST174-E3
JFET Transistor, Junction Field Effect, 30 V, -135 mA, 10 V, TO-236, 3 Pin, 150 °C
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Modèle arrêté
Informations produit
FabricantVISHAY
Réf. FabricantSST174-E3
Code Commande06J8317
Fiche technique
Breakdown Voltage Vbr30V
Gate Source Breakdown Voltage Max30V
Zero Gate Voltage Drain Current Idss Min-20mA
Zero Gate Voltage Drain Current Max-135mA
Gate Source Cutoff Voltage Max10V
Transistor Case StyleTO-236
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeP Channel
Operating Temperature Max150°C
Transistor MountingSurface Mount
Qualification-
Product Range-
SVHCTo Be Advised
Aperçu du produit
The SST174-E3 is a P-channel JFET designed to provide low ON-resistance and fast switching. It simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series. It is designed for use with analogue switches, choppers, sample-and-hold, normally ON switches and current limiters applications.
- Low insertion loss
- Low error voltage
- High-speed analogue circuit performance
- Negligible OFF-error, excellent accuracy
- Good frequency response
- Eliminates additional buffering
- 25ns Fast switching
- 10pA Low leakage
- 5pF Low capacitance
Applications
Industrial, Power Management
Spécifications techniques
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Idss Min
-20mA
Gate Source Cutoff Voltage Max
10V
Transistor Type
JFET
Channel Type
P Channel
Transistor Mounting
Surface Mount
Product Range
-
SVHC
To Be Advised
Gate Source Breakdown Voltage Max
30V
Zero Gate Voltage Drain Current Max
-135mA
Transistor Case Style
TO-236
No. of Pins
3 Pin
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
Télécharger le certificat de conformité du produit
Certificat de conformité du produit