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SST201-T1-E3
JFET Transistor, Junction Field Effect, -40 V, 1 mA, -1.5 V, TO-236, 3 Pin, 150 °C
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Modèle arrêté
Informations produit
FabricantVISHAY
Réf. FabricantSST201-T1-E3
Code Commande06J8328
Fiche technique
Gate Source Breakdown Voltage Max-40V
Breakdown Voltage Vbr-40V
Zero Gate Voltage Drain Current Idss Min200µA
Zero Gate Voltage Drain Current Max1mA
Gate Source Cutoff Voltage Max-1.5V
Transistor Case StyleTO-236
Transistor TypeJFET
No. of Pins3 Pin
Channel TypeN Channel
Transistor MountingSurface Mount
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Aperçu du produit
The SST201-T1-E3 is a N-channel JFET with low cut-off voltage and high input impedance. It is excellent for battery powered equipment and low current amplifiers.
- Very low noise
- High gain
- Low signal loss/system error
- High system sensitivity
- High quality low level amplification
Applications
Audio, Power Management
Spécifications techniques
Gate Source Breakdown Voltage Max
-40V
Zero Gate Voltage Drain Current Idss Min
200µA
Gate Source Cutoff Voltage Max
-1.5V
Transistor Type
JFET
Channel Type
N Channel
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Breakdown Voltage Vbr
-40V
Zero Gate Voltage Drain Current Max
1mA
Transistor Case Style
TO-236
No. of Pins
3 Pin
Transistor Mounting
Surface Mount
Qualification
-
MSL
MSL 1 - Unlimited
Documents techniques (1)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :To Be Advised
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Certificat de conformité du produit