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WG30R140W1Q
IGBT, 60 A, 1.8 V, 357 W, 1.4 kV, TO-247, 3 Pins
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
FabricantWEEN SEMICONDUCTORS
Réf. FabricantWG30R140W1QCopie
Délai d’approvisionnement standard du fabricant26 semaines
Code Commande27AM4925
Votre numéro de pièce
144 En Stock
| Quantité | Prix |
|---|---|
| 1+ | 4,570 $ |
| 10+ | 4,070 $ |
| 25+ | 3,660 $ |
| 50+ | 3,480 $ |
| 100+ | 3,130 $ |
| 250+ | 2,750 $ |
| 500+ | 2,680 $ |
Prix pour :Each
Minimum: 1
Multiple: 1
4,57 $
Note à la ligne
Ajouté à votre confirmation de commande, à votre facture et à votre note d’expédition pour cette commande uniquement.
Informations produit
FabricantWEEN SEMICONDUCTORS
Réf. FabricantWG30R140W1QCopie
Délai d’approvisionnement standard du fabricant26 semaines
Code Commande27AM4925
Fiche technique
Continuous Collector Current60A
Collector Emitter Saturation Voltage1.8V
Power Dissipation357W
Collector Emitter Voltage Max1.4kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
SVHCTo Be Advised
Aperçu du produit
WG30R140W1Q is an IGBT. It uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode. This device is part of reverse-conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency for soft commutation. Typical applications include microwave ovens, induction heating, resonant converters, soft switching applications.
- Reverse conducting IGBT with monolithic body diode
- Low conduction losses, EMI improved design
- Positive temperature efficient for easy parallel operating
- Collector-emitter breakdown voltage is 1400V min at VGE = 0V; IC = 1mA
- Diode forward voltage is 2V typ at VGE = 0V; IF = 30A; Tj = 25°C
- Zero gate voltage collector current is 100μA max at VCE = 1400V; VGE = 0V; Tj = 25°C
- Gate charge is 153nC typ at VCC = 1120V; IC = 30A; VGE = 15V;Tj = 25°C
- Turn-off delay time is 129nS typ at Tj=25°C;IC=30A; VGE=15V / 0V; RG=10 ohm;Cr=300nF; R=2ohm
- TO247 package
- Maximum operating junction temperature is 175°C
Spécifications techniques
Continuous Collector Current
60A
Power Dissipation
357W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage Max
1.4kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
To Be Advised
Documents techniques (1)
Législation et Questions environnementales
US ECCN:Unknown
EU ECCN:Unknown
Conforme RoHS :À déterminer
Conforme à la norme RoHS Phthalates:À déterminer
SVHC :To Be Advised
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