Print Page
G3F18MT12FB4
Silicon Carbide MOSFET, Full Bridge, N Channel, 53 A, 1.2 kV, 0.024 ohm, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerGENESIC
Manufacturer Part NoG3F18MT12FB4
Newark Part No.39AM8768
Product RangeSiCPAK F Series
Technical Datasheet
48 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
View cut-off times
| Quantity | Price |
|---|---|
| 1+ | $181.010 |
| 5+ | $176.160 |
| 10+ | $171.100 |
| 25+ | $168.560 |
| 96+ | $166.100 |
| 144+ | $156.130 |
Price for:Each
Minimum: 1
Multiple: 1
$181.01
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerGENESIC
Manufacturer Part NoG3F18MT12FB4
Newark Part No.39AM8768
Product RangeSiCPAK F Series
Technical Datasheet
MOSFET Module ConfigurationFull Bridge
Channel TypeN Channel
Continuous Drain Current Id53A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.024ohm
Transistor Case StyleModule
No. of Pins22Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation106W
Operating Temperature Max175°C
Product RangeSiCPAK F Series
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Full Bridge
Continuous Drain Current Id
53A
Drain Source On State Resistance
0.024ohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
106W
Product Range
SiCPAK F Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate