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AUIRF7343QTR
Dual MOSFET, Complementary N and P Channel, 55 V, 4.7 A, 0.043 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | AUIRF7343QTRCopy |
| Manufacturer Standard Lead Time | 22 weeks |
| Newark Part No. | Re-Reel43AC2192RL Cut Tape43AC2192 |
| Product Range | HEXFET Series |
| Your Part Number | |
| Technical Datasheet |
13,763 In Stock
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Order before 6pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.750 | $3.75 |
| Total Price | $3.75 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.750 |
| 50+ | $3.290 |
| 100+ | $2.980 |
| 250+ | $2.660 |
| 500+ | $2.320 |
| 1000+ | $1.990 |
| 2500+ | $1.810 |
| 5000+ | $1.710 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | AUIRF7343QTRCopy |
| Manufacturer Standard Lead Time | 22 weeks |
| Newark Part No. | Re-Reel43AC2192RL Cut Tape43AC2192 |
| Product Range | HEXFET Series |
| Technical Datasheet | |
| Channel Type | Complementary N and P Channel |
| Drain Source Voltage Vds N Channel | 55V |
| Drain Source Voltage Vds | 55V |
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id | 4.7A |
| Continuous Drain Current Id N Channel | 4.7A |
| Continuous Drain Current Id P Channel | 4.7A |
| Drain Source On State Resistance N Channel | 0.043ohm |
| Drain Source On State Resistance P Channel | 0.043ohm |
| Transistor Case Style | SOIC |
| No. of Pins | 8Pins |
| Power Dissipation N Channel | 2W |
| Power Dissipation P Channel | 2W |
| Operating Temperature Max | 150°C |
| Product Range | HEXFET Series |
| Qualification | AEC-Q101 |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (27-Jun-2018) |
Product Overview
- Automotive HEXFET® power MOSFET
- Automotive qualified
- Advanced planar technology
- Ultra-low on-resistance
- Logic level gate drive
- Dual N and P channel MOSFET
Technical Specifications
| Channel Type | Complementary N and P Channel |
|---|---|
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id | 4.7A |
| Continuous Drain Current Id P Channel | 4.7A |
| Drain Source On State Resistance P Channel | 0.043ohm |
| No. of Pins | 8Pins |
| Power Dissipation P Channel | 2W |
| Product Range | HEXFET Series |
| MSL | MSL 1 - Unlimited |
| Drain Source Voltage Vds N Channel | 55V |
|---|---|
| Drain Source Voltage Vds P Channel | 55V |
| Continuous Drain Current Id N Channel | 4.7A |
| Drain Source On State Resistance N Channel | 0.043ohm |
| Transistor Case Style | SOIC |
| Power Dissipation N Channel | 2W |
| Operating Temperature Max | 150°C |
| Qualification | AEC-Q101 |
| SVHC | No SVHC (27-Jun-2018) |
Technical Docs (2)
Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (27-Jun-2018) |
| Download Product Compliance Certificate | Product Compliance Certificate |