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BSC059N04LSGATMA1
Power MOSFET, N Channel, 40 V, 73 A, 0.0059 ohm, SON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC059N04LSGATMA1Copy
Manufacturer Standard Lead Time50 weeks
Newark Part No.60R2499
Also Known AsBSC059N04LS G, SP000391499
Your Part Number
12,769 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.170 |
| 10+ | $1.350 |
| 100+ | $0.889 |
| 500+ | $0.705 |
| 1000+ | $0.627 |
| 2500+ | $0.587 |
| 10000+ | $0.481 |
Price for:Each
Minimum: 1
Multiple: 1
$2.17
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC059N04LSGATMA1Copy
Manufacturer Standard Lead Time50 weeks
Newark Part No.60R2499
Also Known AsBSC059N04LS G, SP000391499
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id73A
Drain Source On State Resistance0.0059ohm
On Resistance Rds(on)0.0049ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Power Dissipation Pd50W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation50W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSC059N04LS G is a 40V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET is ideal for fast switching applications. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0059ohm
Transistor Case Style
PG-TDSON
Power Dissipation Pd
50W
Gate Source Threshold Voltage Max
1.2V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
73A
On Resistance Rds(on)
0.0049ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate