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BSZ042N06NSATMA1
Power MOSFET, N Channel, 60 V, 40 A, 0.0042 ohm, TSDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSZ042N06NSATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4586
Re-Reel47Y8008RL
Cut Tape47Y8008
Also Known AsBSZ042N06NS, SP000917418
Your Part Number
Available to Order
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $2.880 | $14.40 |
| Total Price | $14.40 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 5+ | $2.880 |
| 10+ | $1.830 |
| 15+ | $1.680 |
| 25+ | $1.530 |
| 50+ | $1.380 |
| 125+ | $1.240 |
| 250+ | $1.210 |
Full Reel
| Quantity | Price |
|---|---|
| 5000+ | $1.040 |
| 15000+ | $0.986 |
| 25000+ | $0.966 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ042N06NSATMA1Copy
Manufacturer Standard Lead Time52 weeks
Newark Part No.
Full Reel86AK4586
Re-Reel47Y8008RL
Cut Tape47Y8008
Also Known AsBSZ042N06NS, SP000917418
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id40A
On Resistance Rds(on)0.0034ohm
Drain Source On State Resistance4200µohm
Transistor Case StyleTSDSON
Transistor MountingSurface Mount
Power Dissipation Pd69W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation69W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSZ042N06NS is an OptiMOS™ N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS). In addition these devices are a perfect choice for a broad range of industrial applications including solar micro inverter and fast switching DC-to-DC converter.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- MSL1 rated
- 40% lower RDS (ON) than alternative devices
- 40% Improvement of FOM over similar devices
- 100% Avalanche tested
- Superior thermal resistance
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
- Higher solder joint reliability due to enlarged source interconnection
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0034ohm
Transistor Case Style
TSDSON
Power Dissipation Pd
69W
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
40A
Drain Source On State Resistance
4200µohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
69W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate