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FF200R12KT4HOSA1
IGBT Module, Dual [Half Bridge], 320 A, 1.75 V, 1.1 kW, 150 °C, Module
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| Quantity | Price |
|---|---|
| 1+ | $120.950 |
| 5+ | $109.610 |
| 10+ | $98.260 |
Price for:Each
Minimum: 1
Multiple: 1
$120.95
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF200R12KT4HOSA1
Newark Part No.27X9041
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
DC Collector Current320A
Continuous Collector Current320A
Collector Emitter Saturation Voltage1.75V
Collector Emitter Saturation Voltage Vce(on)1.75V
Power Dissipation1.1kW
Power Dissipation Pd1.1kW
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 4 [Trench/Field Stop]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
320A
Collector Emitter Saturation Voltage Vce(on)
1.75V
Power Dissipation Pd
1.1kW
Operating Temperature Max
150°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (21-Jan-2025)
DC Collector Current
320A
Collector Emitter Saturation Voltage
1.75V
Power Dissipation
1.1kW
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
IGBT Technology
IGBT 4 [Trench/Field Stop]
Product Range
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate