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IPD055N08NF2SATMA1
Power MOSFET, N Channel, 80 V, 98 A, 0.0047 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPD055N08NF2SATMA1
Newark Part No.63AK1709
Product RangeStronglRFET Series
Technical Datasheet
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| 1+ | $0.855 |
| 10+ | $0.855 |
| 25+ | $0.855 |
| 50+ | $0.855 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD055N08NF2SATMA1
Newark Part No.63AK1709
Product RangeStronglRFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id98A
Drain Source On State Resistance4700µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.8V
Power Dissipation107W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeStronglRFET Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
98A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
107W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
4700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.8V
No. of Pins
3Pins
Product Range
StronglRFET Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate