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IPD50N04S410ATMA1
MOSFET, AEC-Q101, N-CH, 40V, TO-252
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ManufacturerINFINEON
Manufacturer Part NoIPD50N04S410ATMA1
Newark Part No.13AC9041
Product RangeOptiMOS T2
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.660 |
| 10+ | $1.040 |
| 25+ | $0.916 |
| 50+ | $0.798 |
| 100+ | $0.680 |
| 250+ | $0.605 |
| 500+ | $0.529 |
| 1000+ | $0.479 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$1.66
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD50N04S410ATMA1
Newark Part No.13AC9041
Product RangeOptiMOS T2
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id50A
On Resistance Rds(on)0.0085ohm
Drain Source On State Resistance0.0085ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation Pd41W
Power Dissipation41W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T2
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.0085ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
41W
No. of Pins
3Pins
Product Range
OptiMOS T2
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.0085ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation
41W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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