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IPD50P03P4L11ATMA2
Power MOSFET, P Channel, 30 V, 50 A, 0.0105 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD50P03P4L11ATMA2
Newark Part No.51AH5905
Product RangeOptiMOS-P2 Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.534 |
| 10+ | $0.534 |
| 25+ | $0.534 |
| 50+ | $0.534 |
| 100+ | $0.534 |
| 250+ | $0.534 |
| 500+ | $0.534 |
| 1000+ | $0.534 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD50P03P4L11ATMA2
Newark Part No.51AH5905
Product RangeOptiMOS-P2 Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id50A
On Resistance Rds(on)0.0083ohm
Drain Source On State Resistance0.0105ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd58W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation58W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS-P2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0083ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
58W
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
OptiMOS-P2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
0.0105ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
58W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate