IPD60R950C6ATMA1

The IPD60R750E6 is a 600V CoolMOS™ E6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ E6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

• Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
• Very high commutation ruggedness
• Easy to use
• Better light load efficiency
• Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
• Better performance in comparison to previous CoolMOS™ generations
• More efficient, more compact, lighter and cooler
• Improved power density
• Improved reliability
• General purpose part can be used in both soft and hard switching topologies

Applications

Industrial, Power Management, Alternative Energy, Consumer Electronics, Communications & Networking, Automotive, Lighting

Notes

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.