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IPD65R650CEAUMA1
MOSFET, N-CH, 650V, 10.1A, TO-252
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPD65R650CEAUMA1
Newark Part No.34AC1687
Product RangeCoolMOS CE
Technical Datasheet
2,638 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $2.120 |
| 10+ | $1.340 |
| 25+ | $1.220 |
| 50+ | $1.110 |
| 100+ | $0.991 |
| 250+ | $0.909 |
| 500+ | $0.826 |
| 1000+ | $0.769 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$2.12
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD65R650CEAUMA1
Newark Part No.34AC1687
Product RangeCoolMOS CE
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id10.1A
On Resistance Rds(on)0.54ohm
Drain Source On State Resistance0.54ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd86W
Gate Source Threshold Voltage Max3V
Power Dissipation86W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeCoolMOS CE
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.54ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
CoolMOS CE
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Continuous Drain Current Id
10.1A
Drain Source On State Resistance
0.54ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
86W
Power Dissipation
86W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability