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ManufacturerINFINEON
Manufacturer Part NoIPD70P04P4L08ATMA2
Newark Part No.51AH5909
Product RangeOptiMOS-P2 Series
Technical Datasheet
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD70P04P4L08ATMA2
Newark Part No.51AH5909
Product RangeOptiMOS-P2 Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id70A
Drain Source On State Resistance0.0078ohm
On Resistance Rds(on)0.0064ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd75W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation75W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS-P2 Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0078ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
75W
Gate Source Threshold Voltage Max
1.7V
No. of Pins
3Pins
Product Range
OptiMOS-P2 Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
P Channel
Continuous Drain Current Id
70A
On Resistance Rds(on)
0.0064ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
75W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate