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IPL60R065P7AUMA1
Power MOSFET, N Channel, 600 V, 41 A, 0.065 ohm, VSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIPL60R065P7AUMA1
Newark Part No.49AC8000
Product RangeCoolMOS P7
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 1+ | $8.860 |
| 10+ | $5.700 |
| 25+ | $5.310 |
| 50+ | $4.920 |
| 100+ | $4.540 |
| 250+ | $4.490 |
| 500+ | $4.450 |
| 1000+ | $4.190 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$8.86
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPL60R065P7AUMA1
Newark Part No.49AC8000
Product RangeCoolMOS P7
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id41A
On Resistance Rds(on)0.053ohm
Drain Source On State Resistance0.065ohm
Transistor Case StyleVSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation Pd201W
Power Dissipation201W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeCoolMOS P7
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
600V CoolMOS™ P7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecom and UPS.
- Suitable for hard and soft switching due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness <gt/>2KV (HBM) for all products
- Best in class RDS(on)/package
- Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages
- Simplified thermal management due to low switching and conduction losses
- Increased power density solutions
- Suitable for a wide variety of applications and power ranges
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
0.053ohm
Transistor Case Style
VSON
Rds(on) Test Voltage
10V
Power Dissipation Pd
201W
No. of Pins
4Pins
Product Range
CoolMOS P7
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
41A
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
Power Dissipation
201W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate